Temporomandibular joint disorders (TMJD) include temporomandibular joint dysfunction and bruxism. Sacroiliac joint dysfunction (SJD) is a frequent cause of non-discogenic low back pain. Studies suggest a relationship between TMJD and SJD; however, the link remains unclear. Neural therapy (NT) utilises local anaesthetic injections to treat pain by normalising a dysfunctional autonomic nervous system held responsible for initiating or propagating chronic pain. A 31-year-old female presented with a 1-year history of mechanical left-sided low back pain and sleep bruxism. Examination revealed crepitation of the left TMJ and a trigger point in the masseter muscle. Range of motion of the spine and hip joints were normal, Patrick and Geanslen tests were positive on the left side. Spine and standing flexion tests were also positive. Magnetic resonance imaging of the lumbar spine and sacroiliac joints were normal. A diagnosis of SJD was made, and the patient was treated using NT. Injections of lidocaine 0.5% to the left TMJ, the masseter muscle and intradermal segmental injections at the level of C4 were administered. The patient’s back pain and TMJ tenderness reduced and continued so throughout the 3-month follow-up period. SJD may be related to TMJD, and NT may be used in its treatment.The accurate control of the crystal phase in III-V semiconductor nanowires (NWs) is an important milestone for device applications. Although cubic zinc-blende (ZB) GaAs is a well-established material in microelectronics, the controlled growth of hexagonal wurtzite (WZ) GaAs has thus far not been achieved successfully. Specifically, the prospect of growing defect-free and gold catalyst-free wurtzite GaAs would pave the way towards integration on silicon substrate and new device applications. In this article, we present a method to select and maintain the WZ crystal phase in self-assisted NWs by molecular beam epitaxy. By choosing a specific regime where the NW growth process is a self-regulated system, the main experimental parameter to select the ZB or WZ phase is the V/III flux ratio. Using an analytical growth model, we show that the V/III flux ratio can be finely tuned by changing the As flux, thus driving the system toward a stationary regime where the wetting angle of the Ga droplet can be maintained in the range of values allowing the formation of pure WZ phase. The analysis of the in situ reflection high energy electron diffraction evolution, combined with high-resolution scanning transmission electron microscopy (TEM), dark field TEM, and photoluminescence all confirm the control of an extended pure WZ segment, more than a micrometer long, obtained by molecular beam epitaxy growth of self- assisted GaAs NWs with a V/III flux ratio of 4.0. This successful controlled growth of WZ GaAs suggests potential benefits for electronics and opto-electronics applications.Planar UV-C light emitting diodes still suffer from low efficiency, mainly due to substrate crystalline quality, p doped conductivity and extraction efficiency. One possible way to overcome partly these issues is to realize the whole UV structure on AlGaN pyramids by selective area growth in order to benefit from the advantages of such structures, i.e. the dislocation filtering and the semi polar planes. UNC6852 price We present here a detailed study about the epitaxy of AlGaN nano-sized pyramids by metal organic vapor phase epitaxy on patterned templates presenting different holes apertures and pitches as 1.5 μm and 4 μm or 100 nm and 250 nm respectively. While increasing the Al content, their height decreases while the thickness of the deposition on the mask increases whatever the design of the mask. Those changes of the pyramid shapes and deposition are directly linked to the properties of Al adatoms, i.e. low Al diffusion length. Using the conventional growth mode for the epitaxy of those pyramids did not permit the incorporation of Al from the base of the pyramids to their truncated apex. Its presence was concentrated on the edges and top of the pyramids. On the contrary, a pulsed growth mode, coupled with a strongly reduced pitch, allowed an incorporation of Al since the base of the nanopyramid, and a decrease of the deposition height on the mask. These results can be explained by the desorption of Ga species, due to the presence of H2 in the reactor chamber during the step without the metal precursors, leading to a higher Al/Ga ratio. It is even enhanced inside the holes by the reduced pitch.The allure of all-carbon electronics stems from the spread of its physical properties across all its allotropes. The scheme also harbours unique challenges, such as tunability of band gap, variability of doping and defect control. Here, we explore the technique of scanning probe tip-induced nanoscale reduction of graphene oxide (GO), which nucleates conducting, [Formula see text] rich graphitic regions on the insulating GO background. The flexibility of direct writing is supplemented with control over the degree of reduction and tunability of band gap through macroscopic control parameters. The fabricated reduced GO channels and ensuing devices are investigated via spectroscopy and temperature and bias-dependent electrical transport and correlated with spatially resolved electronic properties, using surface potentiometry. The presence of carrier localization effects, induced by the phase-separated [Formula see text] domains, and large local electric field fluctuations are reflected in the non-linear transport across the channels. Together, the results indicate a complex transport phenomenon, which may be variously dominated by tunnelling or variable range hopping or activated depending on the electronic state of the material.Uncertainties in the relative biological effectiveness (RBE) of protons remains a major barrier to the biological optimisation of proton therapy. While a constant value of 1.1 is widely used in treatment planning, extensive preclinical in vitro and in vivo data suggests that proton RBE is variable, depending on proton energy, target tissue, and endpoint. A number of phenomenological models have been developed to try and explain this variation, but agreement between these models is often poor. This has been attributed to both the models’ underlying assumptions and the data to which they are fit. In this brief note, we investigate the underlying trends in these models by comparing their predictions as a function of relevant biological and physical parameters, to determine where models are in conceptual agreement or disagreement. By doing this, it can be seen that the primary differences between models arise from how they handle biological parameters (i.e. [Formula see text] and [Formula see text] from the linear-quadratic model for photon exposures).